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HYG020N04NR1B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG020N04NR1B product

HYG020N04NR1B

FETs

MOSFETN-Channel40VPower

The HYG020N04NR1B is a 40V, 220A N-Channel MOSFET in a TO-263-2L package, optimized for high-current switching and battery protection.

Best for

  • Li-battery protection
  • Power switching

Avoid if

  • Low-power, space-constrained applications

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
40 V
Id
220 A
Rds(on)
1.9 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

0d0076cf62f9352f686a8cff8995a19e_2207261800_HUAYI-HYG020N04NR1B_C5121310.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG020N04NR1B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET featuring low on-resistance and high current capacity, suitable for power management.