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HYG024N03LR1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG024N03LR1D product

HYG024N03LR1D

MOSFETs - Single

MOSFETN-Channel30V100A

The HYG024N03LR1D is a 30V, 100A N-Channel MOSFET in a TO-252-2L package, optimized for low on-resistance and high-efficiency power switching.

Best for

  • Battery management systems
  • DC-DC power conversion

Avoid if

  • Applications requiring extremely low gate charge or very high-frequency switching

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vdss
30 V
Id
100 A
RDS(on) (typ)
2.3 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

c022c73a17623e4c598bbc29e2a6d458_2108261730_HUAYI-HYG024N03LR1D_C2888332.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG024N03LR1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET from HUAYI, rated for 30V and 100A.