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HYG025N04NA1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG025N04NA1C2 product

HYG025N04NA1C2

MOSFETs - Single

N-ChannelMOSFET40V190A

The HYG025N04NA1C2 is a robust 40V, 190A N-Channel MOSFET in a PDFN8L(5x6) package, optimized for high-current switching and battery protection.

Best for

  • Battery management systems
  • High-current load switching

Avoid if

  • Low-power applications where smaller packages are required

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
40V
Id
190A
Rds(on)
1.4mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

9ba923323f0ce0671254355c3fb16242_2111161830_HUAYI-HYG025N04NA1C2_C2917677.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG025N04NA1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET from HUAYI, designed for high-efficiency power switching.