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HYG025N04NR1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG025N04NR1D product

HYG025N04NR1D

MOSFETs - Single

N-ChannelMOSFET40V157A

The HYG025N04NR1D is a 40V, 157A N-Channel MOSFET in a TO-252-2L package, designed for high-current load switching and battery protection.

Best for

  • Battery management systems
  • High-current power switching

Avoid if

  • Space-constrained designs requiring smaller packages than TO-252

Check before use

  • Thermal design and heat sinking

Key specifications

Drain-Source Voltage
40 V
Continuous Drain Current
157 A
RDS(on)
2.4 mΩ (max)

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

da1975244784b0398635683d1aed5aee_2311271014_HUAYI-HYG025N04NR1D_C19268962.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG025N04NR1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET featuring low on-resistance (2mΩ typ) and high current capacity.