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HYG025N06LS1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG025N06LS1D product

HYG025N06LS1D

MOSFETs - Single

N-ChannelMOSFET60V160A

The HYG025N06LS1D is a high-performance 60V, 160A N-Channel MOSFET designed for high-frequency power conversion and power tool applications.

Best for

  • Synchronous Buck Converters
  • Power Tools
  • DC-DC Power Systems

Avoid if

  • Low-power, space-constrained applications where a smaller package is required.

Check before use

  • Thermal dissipation requirements at high current loads.

Key specifications

VDSS
60 V
ID
160 A
RDS(ON)
2.6 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

905a1c8778d5f2a9e0677b38d876e649_2109031530_HUAYI-HYG025N06LS1D_C2891600.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG025N06LS1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET featuring a 60V drain-source voltage and 160A continuous drain current capability.