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HYG028N10NS1B6 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG028N10NS1B6 product

HYG028N10NS1B6

MOSFETs - Single

N-ChannelMOSFET100V230A

The HYG028N10NS1B6 is a high-performance 100V N-Channel MOSFET in a TO-263-6L package, suitable for high-current power switching and motor control.

Best for

  • High-current power switching
  • Motor control

Avoid if

  • Low-power or space-constrained designs

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
100 V
Id
230 A
Rds(on)
2.4 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingMotor Control

Datasheet

2160bf6278cfe8223f61778da76cf15e_2108182030_HUAYI-HYG028N10NS1B6_C2886383.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG028N10NS1B6: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET with a 100V drain-source voltage and 230A continuous drain current.