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HYG030N03LQ1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG030N03LQ1D product

HYG030N03LQ1D

MOSFETs - Single

N-ChannelMOSFET30V100A

The HYG030N03LQ1D is a 30V, 100A N-Channel enhancement mode MOSFET in a TO-252-2L package, designed for high-current applications like battery protection and motor drives.

Best for

  • Battery management systems
  • DC motor control

Avoid if

  • Applications requiring very low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements at 100A

Key specifications

Vdss
30 V
Id
100 A
Rds(on)
2.5 mΩ (typ)

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

Battery ProtectionMotor Drives

Datasheet

64acecd9cef402d922e9b1576188b3c9_2404071725_HUAYI-HYG030N03LQ1D_C2857463.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG030N03LQ1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET featuring a 30V drain-source voltage and 100A continuous drain current capability.