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HYG030N03LQ1P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG030N03LQ1P product

HYG030N03LQ1P

MOSFETs - Single

N-ChannelMOSFET30V100A

The HYG030N03LQ1P is a 30V, 100A N-Channel MOSFET in a TO-220FB-3L package, optimized for high-current switching and battery protection.

Best for

  • Battery management systems
  • High-current power switching

Avoid if

  • Space-constrained designs requiring SMD packages

Check before use

  • Thermal dissipation requirements at 100A

Key specifications

Drain-Source Voltage
30 V
Continuous Drain Current
100 A
RDS(ON) (typ)
2.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

e75c7c98f10be30b43b10a919eaad47d_2203041530_HUAYI-HYG030N03LQ1P_C2979264.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG030N03LQ1P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET from Huayi Microelectronics, rated for 30V and 100A.