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HYG032N08NS1W AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG032N08NS1W product

HYG032N08NS1W

MOSFETs - Single

MOSFETN-Channel80V185A

The HYG032N08NS1W is an 80V, 185A N-Channel enhancement mode MOSFET in a TO-247A-3L package, designed for high-power switching and UPS applications.

Best for

  • Power switching
  • Uninterruptible power supplies

Avoid if

  • Space-constrained designs requiring smaller packages

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
80 V
Id
185 A
RDS(on)
2.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

e0f88c5eafa341092b5c56814f173169_2404071725_HUAYI-HYG032N08NS1W_C2858385.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG032N08NS1W: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET featuring 80V drain-source voltage and 185A continuous drain current.