ProjectsPricingInsights

HYG035N08NS2C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG035N08NS2C2 product

HYG035N08NS2C2

MOSFETs - Single

N-ChannelMOSFET80V105A

The HYG035N08NS2C2 is a high-performance 80V N-Channel MOSFET in a compact PPAK5*6-8L package, suitable for high-current power switching and battery management.

Best for

  • Inverter power stages
  • Battery protection circuits
  • High-current DC switching

Avoid if

  • Applications requiring extremely low gate drive voltages below 4V

Check before use

  • Thermal dissipation requirements
  • Gate drive circuit capability

Key specifications

Vdss
80 V
Id
105 A
RDS(on)
2.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Inverters

Datasheet

33f98fafd005d6a48c1a74fea8ae0f1d_2205091530_HUAYI-HYG035N08NS2C2_C3011226.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG035N08NS2C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET with an 80V drain-source breakdown voltage and 105A continuous current rating.