ProjectsPricingInsights

HYG035N10NS2P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG035N10NS2P product

HYG035N10NS2P

MOSFETs - Single

MOSFETN-Channel100VPower

The HYG035N10NS2P is a high-performance 100V N-Channel MOSFET suitable for high-current power applications.

Best for

  • DC-DC converters
  • Motor control
  • Power switching

Avoid if

  • Low-power, space-constrained applications where TO-220 is too large.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDSS
100 V
ID
180 A
RDS(ON)
3.2 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingMotor Control

Datasheet

59c011a1f87e87293800ab5c0f1f522f_2211011730_HUAYI-HYG035N10NS2P_C2986718.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG035N10NS2P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET featuring a 100V drain-source voltage and 180A continuous drain current.