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HYG038N03LR1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG038N03LR1C2 product

HYG038N03LR1C2

MOSFETs - Single

N-ChannelMOSFET30VPower

The HYG038N03LR1C2 is a 30V, 84A N-Channel MOSFET designed for high-efficiency switching applications.

Best for

  • Load switching
  • Battery management systems

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

Vdss
30 V
Id
84 A
RDS(on)
3.3 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

138dcb505f9b8320121351ed0a0e1a4e_2210191730_HUAYI-HYG038N03LR1C2_C5205138.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG038N03LR1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET optimized for load switching and battery protection circuits.