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HYG042N10NS1B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG042N10NS1B product

HYG042N10NS1B

MOSFETs - Single

MOSFETN-Channel100V160A

The HYG042N10NS1B is a high-performance 100V, 160A N-Channel MOSFET designed for power switching and DC-DC conversion applications.

Best for

  • Power switching
  • DC-DC converters

Avoid if

  • Low-power, space-constrained applications where smaller packages are required.

Check before use

  • Thermal dissipation requirements and gate drive voltage compatibility.

Key specifications

Vdss
100 V
Id
160 A
RDS(on)
3.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingDC-DC Converters

Datasheet

b374b00ab59a007de19093e3ddf248b3_2106081402_HUAYI-HYG042N10NS1B_C2837371.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG042N10NS1B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET from Huayi Microelectronics, rated for 100V and 160A.