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HYG045P03LQ1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG045P03LQ1D product

HYG045P03LQ1D

MOSFETs - Single

P-ChannelMOSFETPower

The HYG045P03LQ1D is a high-performance P-Channel MOSFET rated for -30V and -90A, optimized for efficient power switching in industrial and consumer applications.

Best for

  • DC/DC converters
  • Motor control
  • Load switching

Avoid if

  • Applications requiring N-Channel logic or voltages exceeding -30V.

Check before use

  • Thermal dissipation requirements at high current levels.

Key specifications

VDS
-30 V
ID
-90 A
RDS(ON)
4.4 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

1bd17c0ae70458040ccc8341e6a73668_2404071726_HUAYI-HYG045P03LQ1D_C5121319.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG045P03LQ1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET from HUAYI, designed for high-current power management and switching applications.