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HYG050N08NS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG050N08NS1C2 product

HYG050N08NS1C2

MOSFETs - Single

N-ChannelMOSFET80V100A

The HYG050N08NS1C2 is a high-performance 80V, 100A N-channel MOSFET in a PPAK5*6-8L package, optimized for power switching and motor control.

Best for

  • Motor control
  • Inverter systems
  • Power switching

Avoid if

  • Applications requiring extremely low gate drive voltages below 4V

Check before use

  • Thermal dissipation requirements
  • Gate driver current capability

Key specifications

Vdss
80 V
Id
100 A
RDS(on)
4.1 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Management

Datasheet

21a8a4cd1b62535c7e8d5b50a2830d59_2211011730_HUAYI-HYG050N08NS1C2_C3040445.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG050N08NS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET designed for high-current power management and switching applications.