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HYG053N10NS1B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG053N10NS1B product

HYG053N10NS1B

MOSFETs - Single

N-ChannelMOSFET100V120A

The HYG053N10NS1B is a robust 100V, 120A N-Channel MOSFET suitable for high-power switching and inverter applications.

Best for

  • Inverter systems
  • Battery management
  • High-current switching

Avoid if

  • Low-power applications where smaller packages are required

Check before use

  • Thermal dissipation requirements
  • Gate driver capability

Key specifications

VDS
100 V
ID
120 A
RDS(ON)
4.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverters

Datasheet

a2328a74f7f4a2cf8643e5305414732c_2109081830_HUAYI-HYG053N10NS1B_C2894735.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG053N10NS1B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-current power management and switching applications.