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HYG053N10NS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG053N10NS1C2 product

HYG053N10NS1C2

MOSFETs - Single

100V MOSFETN-ChannelPower MOSFETPDFN5*6-8L

The HYG053N10NS1C2 is a high-current 100V N-Channel MOSFET in a PDFN5*6-8L package, ideal for power switching and battery management applications.

Best for

  • Inverter systems
  • Battery management
  • High-current switching

Avoid if

  • Applications requiring through-hole mounting
  • Low-voltage circuits where lower RDS(ON) parts are available

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vdss
100 V
Id
95 A
RDS(on)
4.6 mΩ
Qg
73 nC

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverter SystemsBattery Management

CAD Models

Download ECAD models for HYG053N10NS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET from HUAYI, rated for 100V and 95A, designed for high-efficiency power applications.