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HYG053N10NS1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG053N10NS1D product

HYG053N10NS1D

MOSFETs - Single

MOSFETN-Channel100VPower

The HYG053N10NS1D is a 100V, 95A N-Channel MOSFET in a TO-252-2L package, optimized for high-efficiency switching and motor control.

Best for

  • Motor control
  • Power switching
  • Battery management

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Drain-Source Voltage
100 V
Continuous Drain Current
95 A
RDS(ON)
5.2 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Switching

Datasheet

12f72d295b2ad76780a9fbc24bd3758a_HUAYI(华羿微)&HYG053N10NS1D.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG053N10NS1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 100V N-Channel Enhancement Mode MOSFET featuring low on-resistance and high current handling capabilities.