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HYG053N10NS1P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG053N10NS1P product

HYG053N10NS1P

MOSFETs - Single

MOSFET100VN-Channel

The HYG053N10NS1P is a high-performance 100V N-Channel MOSFET designed for power management and switching applications.

Best for

  • Inverter systems
  • Battery management
  • Switching power supplies

Avoid if

  • Applications requiring extremely low gate charge or ultra-small form factors.

Check before use

  • Thermal dissipation requirements for high-current loads.

Key specifications

VDSS
100 V
ID
120 A
RDS(on)
4.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverters

Datasheet

3db7d61c0e7ed43f753ee5ccc8794f99_2108072130_HUAYI-HYG053N10NS1P_C2844409.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG053N10NS1P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 100V, 120A N-Channel Enhancement Mode MOSFET from HUAYI, optimized for high-efficiency switching.