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HYG055N08NS1B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG055N08NS1B product

HYG055N08NS1B

MOSFETs - Single

MOSFETN-Channel80V120A

The HYG055N08NS1B is an 80V, 120A N-Channel MOSFET in a TO-263-2L package, suitable for high-power switching and motor control.

Best for

  • Motor control
  • Inverter systems
  • High-current switching

Avoid if

  • Low-power applications where smaller packages are required

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage

Key specifications

Vdss
80 V
Id
120 A
Rds(on)
5.3 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Management

Datasheet

1932b17e4256d1a29c35f306143662ba_2106061837_HUAYI-HYG055N08NS1B_C2763408.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG055N08NS1B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET from HUAYI, rated for 80V and 120A.