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HYG055N08NS1P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG055N08NS1P product

HYG055N08NS1P

MOSFETs - Single

MOSFETN-Channel80V120A

The HYG055N08NS1P is an 80V, 120A N-Channel enhancement mode MOSFET in a TO-220FB-3L package, optimized for high-efficiency switching and motor control applications.

Best for

  • Motor control
  • Inverter power management
  • High-current switching

Avoid if

  • Applications requiring surface-mount (this is a through-hole TO-220 package)

Check before use

  • Thermal dissipation requirements
  • Gate drive circuit capability

Key specifications

VDSS
80 V
ID
120 A
RDS(ON)
5.3 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Management

Datasheet

999a323294cf3e8a4800fa92a4aaf2c7_2109031530_HUAYI-HYG055N08NS1P_C2892077.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG055N08NS1P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET featuring an 80V drain-source breakdown voltage and a continuous drain current rating of 120A.