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HYG060N08NS1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG060N08NS1D product

HYG060N08NS1D

MOSFETs - Single

MOSFETN-Channel80V80A

The HYG060N08NS1D is a robust 80V, 80A N-Channel MOSFET designed for high-efficiency switching and power management applications.

Best for

  • Inverter systems
  • Switching power supplies
  • Motor control

Avoid if

  • Applications requiring extremely low gate charge or ultra-high frequency switching

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDSS
80 V
ID
80 A
RDS(ON)
5.7 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverters

Datasheet

31579f9c46824fbd67f7435d3848d55b_2105242011_HUAYI-HYG060N08NS1D_C2827238.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG060N08NS1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET with an 80V drain-source voltage rating and 80A continuous current capacity.