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HYG064N08NA1P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG064N08NA1P product

HYG064N08NA1P

MOSFETs - Single

MOSFETN-Channel80V120A

The HYG064N08NA1P is a robust 80V, 120A N-Channel MOSFET suitable for high-current switching and power management.

Best for

  • Inverter systems
  • Power management
  • General switching

Avoid if

  • Applications requiring extremely low gate charge or ultra-small form factors.

Check before use

  • Thermal dissipation requirements and gate drive compatibility.

Key specifications

Vdss
80 V
Id
120 A
RDS(on)
6.4 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverter Systems

Datasheet

d9ad8e93c438a3330b091a791bac27b0_2404071726_HUAYI-HYG064N08NA1P_C5121334.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG064N08NA1P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET designed for high-efficiency switching and power management.