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HYG065N07NS1B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG065N07NS1B product

HYG065N07NS1B

MOSFETs - Single

N-ChannelMOSFET70V100A

The HYG065N07NS1B is a 70V, 100A N-Channel MOSFET optimized for high-efficiency power switching and motor control applications.

Best for

  • Motor control
  • Inverter power stages
  • General purpose high-current switching

Avoid if

  • Applications requiring extremely low gate charge or very high-frequency switching

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

Vdss
70 V
Id
100 A
RDS(on)
5.5 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Management

Datasheet

1e6e0e6e70c8a4985652f03e97ad71b2_2304140030_HUAYI-HYG065N07NS1B_C2827241.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG065N07NS1B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET with a 70V drain-source breakdown voltage and 100A continuous current rating, housed in a TO-263-2L package.