ProjectsPricingInsights

HYG065P03LQ1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG065P03LQ1C2 product

HYG065P03LQ1C2

MOSFETs - Single

MOSFETP-ChannelPower Management

The HYG065P03LQ1C2 is a high-performance P-Channel MOSFET in a PPAK5*6-8L package, suitable for power management and battery protection.

Best for

  • Battery protection
  • DC/DC converters

Avoid if

  • Applications requiring N-Channel logic

Check before use

  • Thermal dissipation requirements

Key specifications

VDSS
-30 V
ID
-70 A
RDS(ON)
5.9 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

a9e435fdc5891b4d01e1e6d7a2626dc9_2208081730_HUAYI-HYG065P03LQ1C2_C5121302.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG065P03LQ1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single P-Channel enhancement mode MOSFET with a -30V drain-source voltage rating and -70A continuous drain current capability.