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HYG067N07NQ1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG067N07NQ1D product

HYG067N07NQ1D

MOSFETs - Single

MOSFETN-ChannelPower68V

The HYG067N07NQ1D is a 68V, 70A N-Channel MOSFET in a TO-252-2L package, suitable for DC-DC converters and battery-powered systems.

Best for

  • DC-DC Converters
  • Battery powered systems

Avoid if

  • Applications requiring extremely low gate charge or very high-frequency switching beyond typical MOSFET capabilities.

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

Drain-Source Voltage
68 V
Continuous Drain Current
70 A
RDS(ON) (Typ)
6.8 mΩ
Package
TO-252-2L

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

ba107005dc8c149657433f459ed1b635_2106041532_HUAYI-HYG067N07NQ1D_C2838123.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG067N07NQ1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency power switching, featuring a 68V drain-source voltage and 70A continuous current capability.