ProjectsPricingInsights

HYG080N10LS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG080N10LS1C2 product

HYG080N10LS1C2

MOSFETs - Single

N-ChannelMOSFET100V65A

The HYG080N10LS1C2 is a 100V, 65A N-Channel MOSFET optimized for high-efficiency power conversion and industrial applications.

Best for

  • Synchronous Buck Converters
  • Power Tools
  • DC-DC Power Systems

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal design and heat sinking requirements

Key specifications

Vdss
100 V
Id
65 A
RDS(on) (typ)
6.9 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

4c0772adaa38b7f18b695f7d9a2120a4_2206131630_HUAYI-HYG080N10LS1C2_C3011225.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG080N10LS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET designed for high-frequency switching and power management applications.