ProjectsPricingInsights

HYG090N06LS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG090N06LS1C2 product

HYG090N06LS1C2

MOSFETs - Single

N-ChannelMOSFET60VPower

The HYG090N06LS1C2 is a 60V, 60A N-channel MOSFET in a PPAK5*6-8L package, optimized for high-frequency power conversion and DC-DC applications.

Best for

  • Synchronous buck converters
  • DC-DC power supplies

Avoid if

  • Applications requiring extremely low gate charge or different package footprints

Check before use

  • Thermal dissipation requirements
  • Gate drive compatibility

Key specifications

Vdss
60 V
Id
60 A
RDS(on)
7.7 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

f2db400a035c578106eca8434b8ff3be_2206131630_HUAYI-HYG090N06LS1C2_C2986240.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG090N06LS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-channel enhancement mode MOSFET designed for power management applications, featuring a 60V drain-source breakdown voltage.