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HYG090ND06LS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG090ND06LS1C2 product

HYG090ND06LS1C2

MOSFETs - Arrays

MOSFETDual N-Channel60VPower Management

The HYG090ND06LS1C2 is a robust dual N-channel MOSFET designed for high-efficiency DC/DC power management and switching applications.

Best for

  • DC/DC Converters
  • Power Switching

Avoid if

  • Applications requiring extremely low gate charge for ultra-high frequency switching

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDSS
60 V
ID
56 A
RDS(ON) (10V)
8.0 mΩ
Package
PDFN8L(5x6)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Switching

CAD Models

Download ECAD models for HYG090ND06LS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET in a PDFN8L(5x6) package, rated for 60V and 56A.