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HYG110P04LQ2C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG110P04LQ2C2 product

HYG110P04LQ2C2

MOSFETs - Single

MOSFETP-ChannelPower Management

The HYG110P04LQ2C2 is a high-performance P-Channel MOSFET in a PDFN5*6-8L package, optimized for power management and battery protection.

Best for

  • DC/DC converters
  • Battery management systems

Avoid if

  • Applications requiring N-Channel logic or significantly higher voltage ratings

Check before use

  • Thermal dissipation capabilities of the target PCB

Key specifications

VDS
-40 V
ID
-55 A
RDS(on)
9.0 mΩ (typ)

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

5daf054d7dd422f340b6898188de6a83_2109200830_HUAYI-HYG110P04LQ2C2_C2891580.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG110P04LQ2C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single P-Channel enhancement mode MOSFET from HUAYI, rated for -40V and -55A.