ProjectsPricingInsights

HYG110P04LQ2D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG110P04LQ2D product

HYG110P04LQ2D

MOSFETs - Single

MOSFETP-ChannelPower

The HYG110P04LQ2D is a -40V, -50A P-Channel enhancement mode MOSFET designed for high-efficiency power management and switching applications.

Best for

  • DC/DC converters
  • Battery protection circuits
  • General power switching

Avoid if

  • Applications requiring N-Channel logic
  • High-frequency switching beyond device capabilities

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-40 V
ID
-50 A
RDS(ON)
9.4 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

a195b91dc2665f4b868887186857e449_2105241638_HUAYI-HYG110P04LQ2D_C2830428.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG110P04LQ2D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET from HUAYI, rated for -40V and -50A, suitable for power switching and battery protection.