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HYG120P06LR1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG120P06LR1D product

HYG120P06LR1D

MOSFETs - Single

P-ChannelMOSFETPower Management60V

The HYG120P06LR1D is a robust -60V, -55A P-Channel MOSFET in a TO-252-2L package, optimized for high-efficiency power switching and motor control.

Best for

  • DC/DC converters
  • Motor drive circuits
  • Load switches

Avoid if

  • Applications requiring ultra-low gate charge for very high-frequency switching

Check before use

  • Thermal dissipation on the PCB
  • Gate driver current capability

Key specifications

VDS
-60 V
ID
-55 A
RDS(on)
12.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

ccb152127fadcba905dbb53f1f8d4518_2108072230_HUAYI-HYG120P06LR1D_C2844410.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG120P06LR1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET from Huayi Microelectronics, rated for -60V and -55A.