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HYG170ND03LA1S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG170ND03LA1S product

HYG170ND03LA1S

MOSFETs - Arrays

Dual MOSFETN-Channel30V

The HYG170ND03LA1S is a dual N-channel MOSFET optimized for power management and battery protection circuits.

Best for

  • DC/DC converters
  • Battery management systems

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
30 V
Id
9 A
RDS(on)
14.5 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

e3877d866caf5c8a4e6648afecb6eac5_2209271730_HUAYI-HYG170ND03LA1S_C5179487.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG170ND03LA1S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET in a SOP8L package, rated for 30V and 9A.