ProjectsPricingInsights

HYG180N10LS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG180N10LS1C2 product

HYG180N10LS1C2

MOSFETs - Single

MOSFETN-Channel100VPower

The HYG180N10LS1C2 is a 100V N-Channel MOSFET in a PDFN8L package, optimized for power switching and high-frequency buck converters.

Best for

  • Power switching
  • Synchronous buck converters

Avoid if

  • Applications requiring extremely low gate drive voltages below 6V

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
100 V
Id
46 A
RDS(on)
16.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

b1830a41d5c402134d98868a04b916da_2207271800_HUAYI-HYG180N10LS1C2_C5121300.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG180N10LS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET with a 100V drain-source voltage rating, suitable for power management circuits.