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HYG200P10LR1B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG200P10LR1B product

HYG200P10LR1B

MOSFETs - Single

MOSFETP-ChannelPower

The HYG200P10LR1B is a P-Channel enhancement mode MOSFET designed for high-power applications, featuring a -100V drain-source voltage and -80A current rating.

Best for

  • DC-DC Converters
  • Battery management systems

Avoid if

  • Low-voltage logic circuits without level shifting

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vdss
-100 V
Id
-80 A
RDS(on)
20 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

52822980b801c6794adaeb644503c029_2206271801_HUAYI-HYG200P10LR1B_C3148162.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG200P10LR1B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET from HUAYI, optimized for high-current switching in portable and battery-powered systems.