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HYG200P10LR1P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG200P10LR1P product

HYG200P10LR1P

MOSFETs - Single

P-ChannelMOSFETPower100V

The HYG200P10LR1P is a high-performance P-Channel MOSFET rated for -100V and -80A, optimized for power management in battery-powered systems and DC-DC converters.

Best for

  • DC-DC converters
  • Battery management systems

Avoid if

  • Low-voltage logic level applications without appropriate gate drive

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDSS
-100 V
ID
-80 A
RDS(on)
20 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Systems

Datasheet

248fa04426aa3e8e455f173b6435244b_2106070104_HUAYI-HYG200P10LR1P_C2687417.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG200P10LR1P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET designed for high-power switching applications, featuring a -100V breakdown voltage and -80A continuous current capability.