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HYG210P06LQ1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG210P06LQ1C2 product

HYG210P06LQ1C2

MOSFETs - Single

P-ChannelMOSFETPower

The HYG210P06LQ1C2 is a -60V, -40A P-Channel enhancement mode MOSFET in a PPAK5*6-8L package, designed for switching, DC/DC power management, and battery protection.

Best for

  • DC/DC converters
  • Battery protection circuits
  • General switching

Avoid if

  • Applications requiring N-Channel logic or significantly higher voltage ratings.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDSS
-60 V
ID
-40 A
RDS(ON)
20 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

2a1a598c58a0b816e147bab0abda3208_2106070104_HUAYI-HYG210P06LQ1C2_C2687418.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG210P06LQ1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single P-Channel enhancement mode MOSFET manufactured by HUAYI, optimized for power switching applications.