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HYG400P10LR1B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG400P10LR1B product

HYG400P10LR1B

MOSFETs - Single

MOSFETP-ChannelPower

The HYG400P10LR1B is a P-channel enhancement mode MOSFET designed for high-power switching applications.

Best for

  • DC-DC Converters
  • Motor Control

Avoid if

  • Low-power, space-constrained applications

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
-100 V
Id
-40 A
Rds(on)
42 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlDC-DC Converters

Datasheet

f8562d749361ea73951e1320021da1b5_2204251600_HUAYI-HYG400P10LR1B_C2977787.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG400P10LR1B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel enhancement mode MOSFET rated for -100V and -40A, suitable for DC-DC converters and motor control.