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HYG800P10LR1D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG800P10LR1D product

HYG800P10LR1D

MOSFETs - Single

MOSFETP-ChannelPower Management

The HYG800P10LR1D is a -100V, -20A P-Channel enhancement mode MOSFET in a TO-252-2L package, suitable for DC/DC power management and load switching.

Best for

  • DC/DC converters
  • Load switching circuits

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs where TO-252 is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDSS
-100 V
ID
-20 A
RDS(ON)
77 mΩ
Package
TO-252-2L

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementLoad Switching

Datasheet

51dd531f3f857ac7aad44d81d577a3cd_HUAYI(华羿微)&HYG800P10LR1D.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG800P10LR1D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET featuring a -100V drain-source voltage and -20A continuous drain current.