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IKW30N60H3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IKW30N60H3 product

IKW30N60H3

Transistors - IGBTs - Single

IGBT600VHigh SpeedInfineon

The IKW30N60H3 is a 600V, 30A high-speed IGBT from Infineon, optimized for high-frequency switching applications.

Best for

  • High-frequency power conversion
  • UPS systems
  • Welding equipment

Avoid if

  • Low-frequency applications where standard speed IGBTs are more cost-effective

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Collector-Emitter Voltage
600 V
Collector Current
30 A
Max Junction Temperature
175 °C

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

IKW30N60H3_Rev1_1G.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IKW30N60H3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a third-generation high-speed IGBT featuring Trench and Fieldstop technology, integrated with a soft, fast recovery anti-parallel diode.