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IMBF170R1K0M1XTMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IMBF170R1K0M1XTMA1 product

IMBF170R1K0M1XTMA1

MOSFETs - Single

SiC MOSFET1700VFly-backInfineon

The IMBF170R1K0M1 is a high-voltage 1700V SiC Trench MOSFET optimized for fly-back power supply designs.

Best for

  • Fly-back power supplies
  • Solar string/central inverters
  • Industrial UPS

Avoid if

  • Applications requiring extremely low RDS(on) below 1000mΩ

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
1700 V
RDS(on)
1000 mΩ
ID
5.2 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

CAD Models

Download ECAD models for IMBF170R1K0M1XTMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1700V Silicon Carbide (SiC) Trench MOSFET from Infineon, specifically engineered for high-efficiency fly-back power supply applications.