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IMBF170R650M1XTMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IMBF170R650M1XTMA1 product

IMBF170R650M1XTMA1

MOSFETs - Single

SiC MOSFET1700VFly-backInfineon

The IMBF170R650M1 is a 1700V SiC Trench MOSFET optimized for high-efficiency fly-back topologies in industrial and energy applications.

Best for

  • Solar string/central inverters
  • Industrial UPS
  • Industrial SMPS
  • Chargers

Avoid if

  • Applications requiring low-voltage operation or non-fly-back topologies where SiC benefits are not required.

Check before use

  • Gate drive voltage compatibility
  • Thermal management requirements
  • Pin configuration (source vs. sense)

Key specifications

VDS
1700 V
RDS(on)
650 mΩ
ID
7.4 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

Industrial Power SuppliesSolar Inverters

Datasheet

bd827ebb75bcc2d4671f39ad071432aa_2404031237_Infineon-Technologies-IMBF170R650M1XTMA1_C3289295.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IMBF170R650M1XTMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1700V Silicon Carbide (SiC) Trench MOSFET from Infineon, specifically optimized for fly-back power supply topologies.