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IMW120R030M1H AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IMW120R030M1H product

IMW120R030M1H

MOSFETs - Single

SiC MOSFET1200VInfineonCoolSiC

The IMW120R030M1H is a high-performance 1200V SiC Trench MOSFET from Infineon, optimized for high-efficiency power conversion in industrial and energy applications.

Best for

  • Solar string inverters
  • Industrial UPS
  • Industrial SMPS

Avoid if

  • Low-voltage applications where SiC benefits are not required

Check before use

  • Gate drive voltage requirements
  • Thermal dissipation capabilities

Key specifications

VDS
1200 V
RDS(on)
30 mΩ
ID
56 A
Tvj,max
175 °C

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

98cd474e601a0280a1f54e5031055604_2005291936_Infineon-Technologies-IMW120R030M1H_C536280.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IMW120R030M1H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Trench MOSFET designed for high-frequency, high-efficiency power electronics.