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IMW120R060M1H AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IMW120R060M1H product

IMW120R060M1H

MOSFETs - Single

SiC MOSFET1200VInfineonCoolSiC

The IMW120R060M1H is a 1200V CoolSiC™ Trench MOSFET optimized for high-efficiency power conversion in industrial and renewable energy applications.

Best for

  • Solar inverters
  • Industrial power supplies
  • EV chargers

Avoid if

  • Low-voltage applications where SiC performance is not required

Check before use

  • Gate drive voltage requirements
  • Thermal dissipation design

Key specifications

VDS
1200 V
ID
36 A
RDS(on)
60 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

d1e7f18fb701403666a512e995c67f4f_2005291936_Infineon-Technologies-IMW120R060M1H_C536281.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IMW120R060M1H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Trench MOSFET from Infineon, designed for high-frequency and high-efficiency power applications.