ProjectsPricingInsights

IMW65R039M1HXKSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IMW65R039M1HXKSA1 product

IMW65R039M1HXKSA1

MOSFETs - Single

SiCMOSFET650VInfineon

The IMW65R039M1H is a high-performance 650V SiC trench MOSFET optimized for industrial power applications requiring high efficiency and thermal robustness.

Best for

  • High-efficiency power supplies
  • EV charging
  • Solar inverters

Avoid if

  • Low-cost, low-efficiency consumer designs where Si MOSFETs suffice

Check before use

  • Gate driver voltage compatibility (18V recommended)
  • Thermal dissipation requirements

Key specifications

VDS
650 V
RDS(on)
39 mΩ
ID
46 A
Tj,max
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

6d20f4aa03d2df0c3eae0a4652755999_2404031046_Infineon-Technologies-IMW65R039M1HXKSA1_C3278949.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IMW65R039M1HXKSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V CoolSiC™ M1 SiC trench MOSFET designed for high-efficiency power conversion.