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IMZ120R030M1HXKSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IMZ120R030M1HXKSA1 product

IMZ120R030M1HXKSA1

MOSFETs - Single

SiC MOSFET1200VInfineonCoolSiC

The IMZ120R030M1H is a high-performance 1200V SiC Trench MOSFET optimized for industrial power applications requiring high efficiency and high switching frequencies.

Best for

  • Solar inverters
  • Industrial UPS
  • High-frequency power supplies

Avoid if

  • Low-voltage applications where SiC is not cost-effective

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

Vdss
1200 V
Id
56 A
Rds(on)
30 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Industrial PowerSolar Energy

Datasheet

ff67d958f6687ebc0b523dd6dad0cf0f.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IMZ120R030M1HXKSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Trench MOSFET from Infineon, featuring a 30mΩ on-resistance and a 4-pin TO-247 package for improved switching performance.