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IMZ120R045M1XKSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IMZ120R045M1XKSA1 product

IMZ120R045M1XKSA1

MOSFETs - Single

SiC MOSFET1200VInfineonPower Electronics

The IMZ120R045M1 is a high-performance 1200V SiC Trench MOSFET optimized for high-frequency, high-efficiency power conversion applications.

Best for

  • High-efficiency power conversion
  • High-frequency switching

Avoid if

  • Low-voltage applications where Si MOSFETs are more cost-effective

Check before use

  • Gate drive voltage requirements
  • Thermal management

Key specifications

VDS
1200 V
RDS(on)
45 mΩ
ID
52 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

c2de5ff4e8b61b28a33512f4dec8914a.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IMZ120R045M1XKSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Trench MOSFET from Infineon, designed for high-efficiency power electronics.