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IMZA120R040M1HXKSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IMZA120R040M1HXKSA1 product

IMZA120R040M1HXKSA1

MOSFETs - Single

SiC MOSFET1200VInfineonPower Electronics

The IMZA120R040M1HXKSA1 is a high-performance 1200 V SiC Trench MOSFET designed for high-efficiency power conversion in industrial applications.

Best for

  • High-efficiency power conversion
  • EV-charging infrastructure
  • Solar energy systems

Avoid if

  • Low-voltage applications where SiC is not cost-effective

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDSS
1200 V
ID
55 A
RDS(on)
39 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

bffeb0becfeb55c910eb29b3d7ef2e66_2312021953_Infineon-Technologies-IMZA120R040M1HXKSA1_C5771896.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IMZA120R040M1HXKSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200 V Silicon Carbide (SiC) Trench MOSFET from Infineon, featuring .XT interconnection technology for improved thermal performance.