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IPA032N06N3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPA032N06N3 G product

IPA032N06N3 G

MOSFETs - Single

MOSFETN-Channel60VInfineon

The IPA032N06N3 G is a high-performance 60V N-channel power MOSFET from Infineon, optimized for high-frequency DC/DC power conversion.

Best for

  • DC/DC converters
  • Synchronous rectification

Avoid if

  • Applications requiring extremely low gate charge

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
60 V
ID
84 A
RDS(on)
3.2 mΩ
Qg
124 nC

Compliance & Environment

RoHS
Not applicable
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

82b96cb2feb926ed991366d413c48a4f_Infineon(英飞凌)&IPA032N06N3 G.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPA032N06N3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power MOSFET designed for high-efficiency power management applications.