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IPAN60R600P7SXKSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPAN60R600P7SXKSA1 product

IPAN60R600P7SXKSA1

MOSFETs - Single

MOSFETSuperjunctionInfineonCoolMOS

The IPAN60R600P7S is a 650V N-channel superjunction MOSFET from Infineon's CoolMOS P7 series, optimized for high-efficiency power conversion in compact designs.

Best for

  • PFC stages
  • LLC resonant converters
  • Compact power supplies

Avoid if

  • Applications requiring extremely high continuous current beyond 6A
  • Designs where non-isolated packages are preferred for thermal performance

Check before use

  • Thermal resistance (RthJC) for your specific heat sink configuration
  • Gate drive requirements for optimal switching

Key specifications

VDS(max)
650 V
RDS(on)
600 mOhm
ID (100°C)
4 A
Qg
9 nC

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyIndustrial

Datasheet

poYBAGHDRsqAOLgbABANsBfgyoc542.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPAN60R600P7SXKSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V (650V VDS max) CoolMOS P7 power transistor designed for high-voltage switching applications, offering low conduction and switching losses.